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MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
I D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T C < 160 o C, V GS = 10V)
Pulsed
Ratings
30
±20
80
See Figure 4
Units
V
V
A
E AS
P D
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25 o C
(Note 1)
1290
254
1.7
mJ
W
W/ o C
T J , T STG Operating and Storage Temperature
-55 to +175
o
C
Thermal Characteristics
R θ JC
R θ JA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-263,1in 2 copper
pad area
0.59
43
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDB8160
Device
FDB8160_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
I DSS
I GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
V DS = 24V, V GS = 0V
T J = 150 o C
V GS = ±20V
30
-
-
-
-
-
-
-
-
1
250
±100
V
μ A
nA
On Characteristics
V GS(th)
r DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 80A, V GS = 10V
I D = 80A, V GS = 10V, T J = 175°C
2
-
-
2.9
1.5
2.6
4
1.8
3.1
V
m Ω
m Ω
Dynamic Characteristics
C iss
C oss
C rss
Rg
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 15V, V GS = 0V,
f = 1MHz
f = 1MHz
V GS = 0 to 10V
-
-
-
-
-
11825
1810
1240
1.75
187
-
-
-
-
243
pF
pF
pF
Ω
nC
Q g(th)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
V GS = 0 to 2V
V DD = 15V
I D = 80A
-
-
-
-
20
43
23
57
26
-
-
-
nC
nC
nC
nC
FDB8160_F085 Rev. C
2
www.fairchildsemi.com
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